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OPTIMOS™ 5 N-CHANNEL POWER MOSFET 100 V ; TO-220 PACKAGE; 3.9 MOHM;
| Part | Vgs (Max) | Technology | Supplier Device Package | Input Capacitance (Ciss) (Max) @ Vds | Mounting Type | Gate Charge (Qg) (Max) @ Vgs | Rds On (Max) @ Id, Vgs | Drain to Source Voltage (Vdss) | FET Type | Operating Temperature [Min] | Operating Temperature [Max] | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Package / Case | Current - Continuous Drain (Id) @ 25°C | Power Dissipation (Max) | Gate Charge (Qg) (Max) @ Vgs [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | 20 V | MOSFET (Metal Oxide) | PG-TO220-3-1 | 7000 pF | Through Hole | 95 nC | 3.9 mOhm | 100 V | N-Channel | -55 °C | 175 ░C | 6 V 10 V | 3.8 V | TO-220-3 | 100 A | 188 W | |
Infineon Technologies | 20 V | MOSFET (Metal Oxide) | PG-TO220-3-1 | 6100 pF | Through Hole | 3.9 mOhm | 40 V | N-Channel | -55 °C | 175 ░C | 4.5 V 10 V | TO-220-3 | 94 W | 78 nC |