DMN3732UFB4-7
UnknownDiodes Inc
30V N-CHANNEL ENHANCEMENT MODE MOSFET
Deep-Dive with AI
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DMN3732UFB4-7
UnknownDiodes Inc
30V N-CHANNEL ENHANCEMENT MODE MOSFET
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | DMN3732UFB4-7 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 1.3 A |
| Drain to Source Voltage (Vdss) | 30 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5 V, 1.8 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 0.9 nC |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 40.8 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | 3-XFDFN |
| Power Dissipation (Max) | 490 mW |
| Rds On (Max) @ Id, Vgs | 460 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 8 V |
| Vgs(th) (Max) @ Id | 950 mV |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
Description
General part information
DMN3732UFB4 Series
This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications.
Documents
Technical documentation and resources