DMN3732UFB4 Series

30V N-Channel Enhancement Mode MOSFET

Catalog

30V N-Channel Enhancement Mode MOSFET

Part	Vgs (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs [Max]	Package / Case	FET Type	Power Dissipation (Max)	Technology	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds [Max]	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)
Diodes Inc DMN3732UFB4-7	8 V	-55 °C	150 °C	Surface Mount	950 mV	30 V	0.9 nC	3-XFDFN	N-Channel	490 mW	MOSFET (Metal Oxide)	460 mOhm	40.8 pF	1.3 A	1.8 V 4.5 V

Catalog

30V N-Channel Enhancement Mode MOSFET

Key Features

• 4mm Ultra Low Profile Package for Thin Application

• 6mm2Package Footprint, 10 Times Smaller than SOT23

• Low VGS(TH),Can Be Driven Directly from A Battery

• Low RDS(ON)

• ESD Protected Gate

• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

• Halogen and Antimony Free. "Green" Device (Note 3)

• For automotive applications requiring specific change control(i.e. parts qualified to AEC-Q100/101/104/200, PPAP capable, and manufactured in IATF16949 certified facilities), pleasecontact usor your local Diodes representative.

Description

This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications.