Technical Specifications
Parameters and characteristics for this part
| Specification | DMT32M4LFG-7 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 30 A, 100 A |
| Drain to Source Voltage (Vdss) | 30 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V, 4.5 V |
| FET Type | N-Channel |
| Input Capacitance (Ciss) (Max) @ Vds | 4366 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | 8-PowerVDFN |
| Power Dissipation (Max) [Max] | 1.1 W |
| Rds On (Max) @ Id, Vgs [Max] | 1.7 mOhm |
| Supplier Device Package | POWERDI3333-8 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 3 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tape & Reel (TR) | 2000 | $ 0.37 | |
| 6000 | $ 0.35 | |||
| 10000 | $ 0.35 | |||
Description
General part information
DMT32M4LFG Series
This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power management applications.
Documents
Technical documentation and resources