DMT32M4LFG Series

30V N-Channel Enhancement Mode MOSFET

Catalog

30V N-Channel Enhancement Mode MOSFET

Part	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Vgs (Max)	Supplier Device Package	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	FET Type	Rds On (Max) @ Id, Vgs [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max) [Max]
Diodes Inc DMT32M4LFG-7	MOSFET (Metal Oxide)	30 V	30 A 100 A	3 V	20 V	POWERDI3333-8	8-PowerVDFN	4.5 V 10 V	4366 pF	Surface Mount	N-Channel	1.7 mOhm	-55 °C	150 °C	1.1 W

Catalog

30V N-Channel Enhancement Mode MOSFET

Key Features

• Low RDS(ON) – Ensures On-State Losses Are Minimized

• Excellent Qgd ×RDS(ON) Product (FOM)

• Advanced Technology for DC-DC Converts

• Small Form Factor Thermally Efficient Package Enables HigherDensity End Products

• Occupies Just 33% of the Board Area Occupied by SO-8 EnablingSmaller End Product

• 100% UIS (Avalanche) Rated

• Lead-Free Finish; RoHS Compliant

• Halogen and Antimony Free. "Green" Device

• For automotive applications requiring specific change control(i.e. parts qualified to AEC-Q100/101/200, PPAP capable, andmanufactured in IATF 16949 certified facilities), pleasecontact us or your local Diodes representative.https://www.diodes.com/quality/product-definitions/

Description

This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power management applications.