DMP2036UVT-7

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Diodes Inc

SMALL SIGNAL FIELD-EFFECT TRANSISTOR,

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Diodes Inc

SMALL SIGNAL FIELD-EFFECT TRANSISTOR,

Technical Specifications

Parameters and characteristics for this part

Specification	DMP2036UVT-7

Current - Continuous Drain (Id) @ 25°C	6 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 1.8 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	20.5 nC
Input Capacitance (Ciss) (Max) @ Vds	1808 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TSOT-23-6, SOT-23-6 Thin
Power Dissipation (Max)	1.1 W
Rds On (Max) @ Id, Vgs	30 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	8 V
Vgs(th) (Max) @ Id	1 V

P-Channel Enhancement Mode MOSFET

Part	Drain to Source Voltage (Vdss)	Technology	Package / Case	Vgs (Max)	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max)	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs [Max]
Diodes Inc DMP2036UVT-7	20 V	MOSFET (Metal Oxide)	SOT-23-6 Thin TSOT-23-6	8 V	30 mOhm	1.8 V 4.5 V	P-Channel	-55 °C	150 °C	1.1 W	1 V	1808 pF	Surface Mount	6 A	20.5 nC

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General part information

P-Channel Enhancement Mode MOSFET

Technical documentation and resources