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P-Channel Enhancement Mode MOSFET
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P-Channel Enhancement Mode MOSFET
P-Channel Enhancement Mode MOSFET
| Part | Drain to Source Voltage (Vdss) | Technology | Package / Case | Vgs (Max) | Rds On (Max) @ Id, Vgs | Drive Voltage (Max Rds On, Min Rds On) | FET Type | Operating Temperature [Min] | Operating Temperature [Max] | Power Dissipation (Max) | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds | Mounting Type | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Diodes Inc | 20 V | MOSFET (Metal Oxide) | SOT-23-6 Thin TSOT-23-6 | 8 V | 30 mOhm | 1.8 V 4.5 V | P-Channel | -55 °C | 150 °C | 1.1 W | 1 V | 1808 pF | Surface Mount | 6 A | 20.5 nC |