SSM6N15AFE,LM

Active

Toshiba Semiconductor and Storage

MOSFET 2N-CH 30V 0.1A ES6

Search across all available documentation for this part.

Active

Toshiba Semiconductor and Storage

MOSFET 2N-CH 30V 0.1A ES6

Technical Specifications

Parameters and characteristics for this part

Specification	SSM6N15AFE,LM

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	100 mA
Drain to Source Voltage (Vdss)	30 V
FET Feature	Logic Level Gate
Input Capacitance (Ciss) (Max) @ Vds	13.5 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SOT-666, SOT-563
Rds On (Max) @ Id, Vgs	4 Ohm
Supplier Device Package	ES6
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	1.5 V

Part	Vgs(th) (Max) @ Id	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	FET Feature	Operating Temperature	Rds On (Max) @ Id, Vgs	Technology	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Configuration	Drain to Source Voltage (Vdss)	Mounting Type
Toshiba Semiconductor and Storage SSM6N15AFE,LM	1.5 V	ES6	100 mA	Logic Level Gate	150 °C	4 Ohm	MOSFET (Metal Oxide)	13.5 pF	SOT-563 SOT-666	2 N-Channel (Dual)	30 V	Surface Mount

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Mosfet Array 30V 100mA 150mW Surface Mount ES6

Technical documentation and resources