MOSFET 2N-CH 30V 0.1A ES6
| Part | Vgs(th) (Max) @ Id | Supplier Device Package | Current - Continuous Drain (Id) @ 25°C | FET Feature | Operating Temperature | Rds On (Max) @ Id, Vgs | Technology | Input Capacitance (Ciss) (Max) @ Vds | Package / Case | Configuration | Drain to Source Voltage (Vdss) | Mounting Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba Semiconductor and Storage | 1.5 V | ES6 | 100 mA | Logic Level Gate | 150 °C | 4 Ohm | MOSFET (Metal Oxide) | 13.5 pF | SOT-563 SOT-666 | 2 N-Channel (Dual) | 30 V | Surface Mount |