AOTF4185

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Alpha & Omega Semiconductor Inc.

MOSFET P-CH 40V 34A TO220FL

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Alpha & Omega Semiconductor Inc.

MOSFET P-CH 40V 34A TO220FL

Technical Specifications

Parameters and characteristics for this part

Specification	AOTF4185

Current - Continuous Drain (Id) @ 25°C	34 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	55 nC
Input Capacitance (Ciss) (Max) @ Vds	2550 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3 Full Pack
Power Dissipation (Max) [Max]	33 W
Rds On (Max) @ Id, Vgs	16 mOhm
Supplier Device Package	TO-220FL
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

Part	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max) [Max]	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs	FET Type	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Mounting Type	Vgs (Max)	Package / Case	Current - Continuous Drain (Id) @ 25°C	Technology	Operating Temperature [Min]	Operating Temperature [Max]	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max)
Alpha & Omega Semiconductor Inc. AOTF4185	2550 pF	33 W	TO-220FL	55 nC	16 mOhm	P-Channel	2.5 V	40 V	Through Hole	20 V	TO-220-3 Full Pack	34 A	MOSFET (Metal Oxide)	-55 °C	175 ░C	4.5 V 10 V
Alpha & Omega Semiconductor Inc. AOTF4126	2200 pF		TO-220F	42 nC	24 mOhm	N-Channel	4 V	100 V	Through Hole	25 V	TO-220-3 Full Pack	6 A 27 A	MOSFET (Metal Oxide)	-55 °C	175 ░C		2.1 W 42 W

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly