IRLR8726TRPBF

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Infineon Technologies

POWER MOSFET, N CHANNEL, 30 V, 86 A, 0.004 OHM, TO-252AA, SURFACE MOUNT

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Infineon Technologies

POWER MOSFET, N CHANNEL, 30 V, 86 A, 0.004 OHM, TO-252AA, SURFACE MOUNT

Technical Specifications

Parameters and characteristics for this part

Specification	IRLR8726TRPBF

Current - Continuous Drain (Id) @ 25°C	86 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	23 nC
Input Capacitance (Ciss) (Max) @ Vds	2150 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max)	75 W
Rds On (Max) @ Id, Vgs	5.8 mOhm
Supplier Device Package	TO-252AA (DPAK)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.35 V

Part	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Mounting Type	Rds On (Max) @ Id, Vgs	Power Dissipation (Max)	FET Type	Gate Charge (Qg) (Max) @ Vgs	Drive Voltage (Max Rds On, Min Rds On)	Technology	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]
Infineon Technologies IRLR8726TRPBF	86 A	2.35 V	30 V	Surface Mount	5.8 mOhm	75 W	N-Channel	23 nC	4.5 V 10 V	MOSFET (Metal Oxide)	20 V	2150 pF	DPAK (2 Leads + Tab) SC-63 TO-252-3	TO-252AA (DPAK)	-55 °C	175 ░C
Infineon Technologies IRLR8726TRLPBF	86 A	2.35 V	30 V	Surface Mount	5.8 mOhm	75 W	N-Channel	23 nC	4.5 V 10 V	MOSFET (Metal Oxide)	20 V	2150 pF	DPAK (2 Leads + Tab) SC-63 TO-252-3	TO-252AA (DPAK)	-55 °C	175 ░C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 30 V 86A (Tc) 75W (Tc) Surface Mount TO-252AA (DPAK)

Technical documentation and resources