POWER MOSFET, N CHANNEL, 30 V, 86 A, 0.004 OHM, TO-252AA, SURFACE MOUNT
| Part | Current - Continuous Drain (Id) @ 25°C | Vgs(th) (Max) @ Id | Drain to Source Voltage (Vdss) | Mounting Type | Rds On (Max) @ Id, Vgs | Power Dissipation (Max) | FET Type | Gate Charge (Qg) (Max) @ Vgs | Drive Voltage (Max Rds On, Min Rds On) | Technology | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | Package / Case | Supplier Device Package | Operating Temperature [Min] | Operating Temperature [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | 86 A | 2.35 V | 30 V | Surface Mount | 5.8 mOhm | 75 W | N-Channel | 23 nC | 4.5 V 10 V | MOSFET (Metal Oxide) | 20 V | 2150 pF | DPAK (2 Leads + Tab) SC-63 TO-252-3 | TO-252AA (DPAK) | -55 °C | 175 ░C |
Infineon Technologies | 86 A | 2.35 V | 30 V | Surface Mount | 5.8 mOhm | 75 W | N-Channel | 23 nC | 4.5 V 10 V | MOSFET (Metal Oxide) | 20 V | 2150 pF | DPAK (2 Leads + Tab) SC-63 TO-252-3 | TO-252AA (DPAK) | -55 °C | 175 ░C |