RJ1R10BBHTL1
ActiveRohm Semiconductor
MOSFET, N-CH, 150V, 105A, TO-263AB ROHS COMPLIANT: YES
RJ1R10BBHTL1
ActiveRohm Semiconductor
MOSFET, N-CH, 150V, 105A, TO-263AB ROHS COMPLIANT: YES
Description
General part information
RJ1R10BBH Series
RJ1R10BBH is a power MOSFET with low on-resistance and high power small mold package, suitable for switching.
Technical Specifications
Parameters and characteristics for this part
| Specification | RJ1R10BBHTL1 |
|---|---|
| Current - Continuous Drain (Id) (Tc) | 105 A, 105 A |
| Drain to Source Voltage (Vdss) | 150 V |
| Drive Voltage (Max Rds On) | 6 V |
| Drive Voltage (Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 130 nC |
| Input Capacitance (Ciss) (Max) | 7750 pF |
| Mounting Type | Surface Mount |
| Operating Temperature | 150 °C |
| Package / Case | D2PAK (2 Leads + Tab), TO-263-3, TO-263AB |
| Package Name | TO-263AB |
| Power Dissipation (Max) | 181 W |
| Rds On (Max) | 8.2 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) | 4 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Sign in to see pricing
Create a free account to access distributor pricing data.
CAD
3D models and CAD resources for this part
Documents
Technical documentation and resources
RJ1R10BBH Data Sheet
About Export Regulations
How to Use LTspice® Models
Measurement Method and Usage of Thermal Resistance RthJC
About Flammability of Materials
Precautions When Measuring the Rear of the Package with a Thermocouple
Anti-Whisker formation - Transistors
Notes for Temperature Measurement Using Forward Voltage of PN Junction
Overview of ROHM's Simulation Models(for ICs and Discrete Semiconductors)
What Is Thermal Design
List of Transistor Package Thermal Resistance
Importance of Probe Calibration When Measuring Power: Deskew
What is a Thermal Model? (Transistor)
Temperature derating method for Safe Operating Area (SOA)
Two-Resistor Model for Thermal Simulation
RJ1R10BBH ESD Data
Method for Calculating Junction Temperature from Transient Thermal Resistance Data
Basics of Thermal Resistance and Heat Dissipation
Types and Features of Transistors
Notes for Temperature Measurement Using Thermocouples
MOSFET Gate Drive Current Setting for Motor Driving
Calculation of Power Dissipation in Switching Circuit
MOSFET Gate Resistor Setting for Motor Driving
Notes for Calculating Power Consumption:Static Operation
Moisture Sensitivity Level - Transistors
Compliance of the RoHS directive
Part Explanation
How to Use LTspice® Models: Tips for Improving Convergence
Method for Monitoring Switching Waveform
PCB Layout Thermal Design Guide
Impedance Characteristics of Bypass Capacitor