Catalog
Nch 150V 105A, TO-263AB, Power MOSFET
Description
AI
RJ1R10BBH is a power MOSFET with low on-resistance and high power small mold package, suitable for switching.
Beta
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Nch 150V 105A, TO-263AB, Power MOSFET
Nch 150V 105A, TO-263AB, Power MOSFET
| Part | Vgs (Max) | FET Type | Operating Temperature | Current - Continuous Drain (Id) (Tc) | Drive Voltage (Max Rds On) | Drive Voltage (Min Rds On) | Package / Case | Drain to Source Voltage (Vdss) | Technology | Input Capacitance (Ciss) (Max) | Rds On (Max) | Mounting Type | Package Name | Gate Charge (Max) | Power Dissipation (Max) | Vgs(th) (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Rohm Semiconductor | 20 V | N-Channel | 150 °C | 105 A 105 A | 6 V | 10 V | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | 150 V | MOSFET (Metal Oxide) | 7750 pF | 8.2 mOhm | Surface Mount | TO-263AB | 130 nC | 181 W | 4 V |