DMP2090UFDB-13
ActiveDiodes Inc
DUAL P-CHANNEL ENHANCEMENT MODE MOSFET
Deep-Dive with AI
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DMP2090UFDB-13
ActiveDiodes Inc
DUAL P-CHANNEL ENHANCEMENT MODE MOSFET
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | DMP2090UFDB-13 |
|---|---|
| Configuration | 2 P-Channel (Dual) Common Source |
| Current - Continuous Drain (Id) @ 25°C | 3.2 A |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 6.8 nC |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 634 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | 6-UDFN Exposed Pad |
| Power - Max [Max] | 790 mW |
| Rds On (Max) @ Id, Vgs | 90 mOhm |
| Supplier Device Package | U-DFN2020-6 (Type B) |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 1 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tape & Reel (TR) | 10000 | $ 0.08 | |
| 30000 | $ 0.08 | |||
| 50000 | $ 0.07 | |||
| 100000 | $ 0.07 | |||
Description
General part information
DMP2090UFDB Series
This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, which makes it ideal for high-efficiency power-management applications.
Documents
Technical documentation and resources