DMP2090UFDB Series

Dual P-Channel Enhancement Mode MOSFET

Catalog

Dual P-Channel Enhancement Mode MOSFET

Part	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds [Max]	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Configuration	Technology	Package / Case	Drain to Source Voltage (Vdss)	Power - Max [Max]
Diodes Inc DMP2090UFDB-7	6.8 nC	634 pF	U-DFN2020-6 (Type B)	-55 °C	150 °C	Surface Mount	1 V	3.2 A	90 mOhm	2 P-Channel (Dual) Common Source	MOSFET (Metal Oxide)	6-UDFN Exposed Pad	20 V	790 mW
Diodes Inc DMP2090UFDB-13	6.8 nC	634 pF	U-DFN2020-6 (Type B)	-55 °C	150 °C	Surface Mount	1 V	3.2 A	90 mOhm	2 P-Channel (Dual) Common Source	MOSFET (Metal Oxide)	6-UDFN Exposed Pad	20 V	790 mW

Catalog

Dual P-Channel Enhancement Mode MOSFET

Key Features

• PCB Footprint of 4mm2

• Low On-Resistance

• Low Input Capacitance

• Low Profile, 0.6mm maximum Height

• ESD Protected Gate

• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

• Halogen and Antimony Free. "Green" Device (Note 3)

• For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/104/200, PPAP capable, and manufactured in IATF 16949 certified facilities), pleasecontact usor your local Diodes representative.https://www.diodes.com/quality/product-definitions/

Description

This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, which makes it ideal for high-efficiency power-management applications.