DMP1555UFA-7B

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Diodes Inc

TRANS MOSFET P-CH 12V 0.2A 3-PIN X2-DFN T/R

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Diodes Inc

TRANS MOSFET P-CH 12V 0.2A 3-PIN X2-DFN T/R

Technical Specifications

Parameters and characteristics for this part

Specification	DMP1555UFA-7B

Current - Continuous Drain (Id) @ 25°C	200 mA
Drain to Source Voltage (Vdss)	12 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 1.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	0.84 nC
Input Capacitance (Ciss) (Max) @ Vds	55.4 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	3-XFDFN
Power Dissipation (Max)	360 mW
Rds On (Max) @ Id, Vgs	800 mOhm
Supplier Device Package	X2-DFN0806-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	8 V
Vgs(th) (Max) @ Id	1 V

P-Channel Enhancement Mode MOSFET

Part	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Vgs(th) (Max) @ Id	Technology	Drain to Source Voltage (Vdss)	FET Type	Supplier Device Package	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]
Diodes Inc DMP1555UFA-7B	200 mA	360 mW	1.5 V 4.5 V	8 V	1 V	MOSFET (Metal Oxide)	12 V	P-Channel	X2-DFN0806-3	Surface Mount	55.4 pF	800 mOhm	0.84 nC	3-XFDFN	-55 °C	150 °C

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General part information

P-Channel Enhancement Mode MOSFET

Technical documentation and resources