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P-Channel Enhancement Mode MOSFET
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P-Channel Enhancement Mode MOSFET
P-Channel Enhancement Mode MOSFET
| Part | Current - Continuous Drain (Id) @ 25°C | Power Dissipation (Max) | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Vgs(th) (Max) @ Id | Technology | Drain to Source Voltage (Vdss) | FET Type | Supplier Device Package | Mounting Type | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Gate Charge (Qg) (Max) @ Vgs | Package / Case | Operating Temperature [Min] | Operating Temperature [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Diodes Inc | 200 mA | 360 mW | 1.5 V 4.5 V | 8 V | 1 V | MOSFET (Metal Oxide) | 12 V | P-Channel | X2-DFN0806-3 | Surface Mount | 55.4 pF | 800 mOhm | 0.84 nC | 3-XFDFN | -55 °C | 150 °C |