SPD03N60C3BTMA1

Obsolete

Infineon Technologies

MOSFET N-CH 650V 3.2A DPAK

Search across all available documentation for this part.

Obsolete

Infineon Technologies

MOSFET N-CH 650V 3.2A DPAK

Technical Specifications

Parameters and characteristics for this part

Specification	SPD03N60C3BTMA1

Current - Continuous Drain (Id) @ 25°C	3.2 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	17 nC
Input Capacitance (Ciss) (Max) @ Vds	400 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max)	38 W
Rds On (Max) @ Id, Vgs	1.4 Ohm
Supplier Device Package	PG-TO252-3-11
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.9 V

Part	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	Drain to Source Voltage (Vdss)	Package / Case	Technology	FET Type	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)
Infineon Technologies SPD03N60C3BTMA1	PG-TO252-3-11	3.2 A	38 W	Surface Mount	-55 °C	150 °C	400 pF	20 V	650 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	MOSFET (Metal Oxide)	N-Channel	1.4 Ohm	17 nC	3.9 V	10 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 650 V 3.2A (Tc) 38W (Tc) Surface Mount PG-TO252-3-11

Technical documentation and resources