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MOSFET N-CH 650V 3.2A DPAK
| Part | Supplier Device Package | Current - Continuous Drain (Id) @ 25°C | Power Dissipation (Max) | Mounting Type | Operating Temperature [Min] | Operating Temperature [Max] | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | Drain to Source Voltage (Vdss) | Package / Case | Technology | FET Type | Rds On (Max) @ Id, Vgs | Gate Charge (Qg) (Max) @ Vgs | Vgs(th) (Max) @ Id | Drive Voltage (Max Rds On, Min Rds On) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | PG-TO252-3-11 | 3.2 A | 38 W | Surface Mount | -55 °C | 150 °C | 400 pF | 20 V | 650 V | DPAK (2 Leads + Tab) SC-63 TO-252-3 | MOSFET (Metal Oxide) | N-Channel | 1.4 Ohm | 17 nC | 3.9 V | 10 V |