DF23MR12W1M1B11BOMA1

Obsolete

Infineon Technologies

SIC 2N-CH 1200V AG-EASY1BM-2

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Obsolete

Infineon Technologies

SIC 2N-CH 1200V AG-EASY1BM-2

Technical Specifications

Parameters and characteristics for this part

Specification	DF23MR12W1M1B11BOMA1

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	25 A
Drain to Source Voltage (Vdss)	1200 V
Drain to Source Voltage (Vdss)	1.2 kV
Gate Charge (Qg) (Max) @ Vgs [Max]	620 nC
Input Capacitance (Ciss) (Max) @ Vds	2000 pF
Mounting Type	Chassis Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-40 °C
Package / Case	Module
Rds On (Max) @ Id, Vgs	45 mOhm
Supplier Device Package	AG-EASY1BM-2
Technology	Silicon Carbide (SiC)
Vgs(th) (Max) @ Id	5.5 V

Part	Configuration	Mounting Type	Vgs(th) (Max) @ Id	Technology	Package / Case	Drain to Source Voltage (Vdss)	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Max]	Operating Temperature [Min]	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs [Max]	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs
Infineon Technologies DF23MR12W1M1B11BOMA1	2 N-Channel (Dual)	Chassis Mount	5.5 V	Silicon Carbide (SiC)	Module	1200 V	1.2 kV	25 A	150 °C	-40 °C	45 mOhm	2000 pF	620 nC	AG-EASY1BM-2
Infineon Technologies DF23MR12W1M1PB11BPSA1	2 N-Channel (Dual)	Chassis Mount	5.55 V	Silicon Carbide (SiC)	Module	1200 V	1.2 kV	25 A	150 °C	-40 °C	45 mOhm	1840 pF		AG-EASY1B-2	62 nC

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Mosfet Array 1200V (1.2kV) 25A Chassis Mount AG-EASY1BM-2

Technical documentation and resources