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SIC 2N-CH 1200V AG-EASY1BM-2
| Part | Configuration | Mounting Type | Vgs(th) (Max) @ Id | Technology | Package / Case | Drain to Source Voltage (Vdss) | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Operating Temperature [Max] | Operating Temperature [Min] | Rds On (Max) @ Id, Vgs | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs [Max] | Supplier Device Package | Gate Charge (Qg) (Max) @ Vgs |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | 2 N-Channel (Dual) | Chassis Mount | 5.5 V | Silicon Carbide (SiC) | Module | 1200 V | 1.2 kV | 25 A | 150 °C | -40 °C | 45 mOhm | 2000 pF | 620 nC | AG-EASY1BM-2 | |
Infineon Technologies | 2 N-Channel (Dual) | Chassis Mount | 5.55 V | Silicon Carbide (SiC) | Module | 1200 V | 1.2 kV | 25 A | 150 °C | -40 °C | 45 mOhm | 1840 pF | AG-EASY1B-2 | 62 nC |