TSM3N80CP ROG

Obsolete

Taiwan Semiconductor Corporation

MOSFET N-CHANNEL 800V 3A TO252

Search across all available documentation for this part.

Obsolete

Taiwan Semiconductor Corporation

MOSFET N-CHANNEL 800V 3A TO252

Technical Specifications

Parameters and characteristics for this part

Specification	TSM3N80CP ROG

Current - Continuous Drain (Id) @ 25°C	3 A
Drain to Source Voltage (Vdss)	800 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	19 nC
Input Capacitance (Ciss) (Max) @ Vds	696 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max)	94 W
Rds On (Max) @ Id, Vgs	4.2 Ohm
Supplier Device Package	TO-252 (DPAK)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4 V

Part	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Package / Case	Power Dissipation (Max)	FET Type	Vgs (Max)	Technology	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)
Taiwan Semiconductor Corporation TSM3N80CP ROG	4 V	4.2 Ohm	19 nC	TO-252 (DPAK)	696 pF	Surface Mount	-55 °C	150 °C	3 A	DPAK (2 Leads + Tab) SC-63 TO-252-3	94 W	N-Channel	30 V	MOSFET (Metal Oxide)	800 V	10 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 800 V 3A (Tc) 94W (Tc) Surface Mount TO-252 (DPAK)

Technical documentation and resources

No documents available