Beta
⌘K
MOSFET N-CHANNEL 800V 3A TO252
| Part | Vgs(th) (Max) @ Id | Rds On (Max) @ Id, Vgs | Gate Charge (Qg) (Max) @ Vgs | Supplier Device Package | Input Capacitance (Ciss) (Max) @ Vds | Mounting Type | Operating Temperature [Min] | Operating Temperature [Max] | Current - Continuous Drain (Id) @ 25°C | Package / Case | Power Dissipation (Max) | FET Type | Vgs (Max) | Technology | Drain to Source Voltage (Vdss) | Drive Voltage (Max Rds On, Min Rds On) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Taiwan Semiconductor Corporation | 4 V | 4.2 Ohm | 19 nC | TO-252 (DPAK) | 696 pF | Surface Mount | -55 °C | 150 °C | 3 A | DPAK (2 Leads + Tab) SC-63 TO-252-3 | 94 W | N-Channel | 30 V | MOSFET (Metal Oxide) | 800 V | 10 V |