IXTU05N100

Obsolete

IXYS

MOSFET N-CH 1000V 750MA TO251

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Obsolete

IXYS

MOSFET N-CH 1000V 750MA TO251

Technical Specifications

Parameters and characteristics for this part

Specification	IXTU05N100

Current - Continuous Drain (Id) @ 25°C	750 mA
Drain to Source Voltage (Vdss)	1000 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	7.8 nC
Input Capacitance (Ciss) (Max) @ Vds	260 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	IPAK, TO-251-3 Short Leads, TO-251AA
Power Dissipation (Max)	40 W
Rds On (Max) @ Id, Vgs	17 Ohm
Supplier Device Package	TO-251AA
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4.5 V

Part	Vgs (Max)	Power Dissipation (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Mounting Type	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs [Max]	Rds On (Max) @ Id, Vgs	Technology	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	Package / Case
IXYS IXTU05N100	30 V	40 W	-55 °C	150 °C	750 mA	4.5 V	1000 V	Through Hole	N-Channel	10 V	7.8 nC	17 Ohm	MOSFET (Metal Oxide)	260 pF	TO-251AA	IPAK TO-251-3 Short Leads TO-251AA

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 1000 V 750mA (Tc) 40W (Tc) Through Hole TO-251AA

Technical documentation and resources

No documents available