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MOSFET N-CH 1000V 750MA TO251
| Part | Vgs (Max) | Power Dissipation (Max) | Operating Temperature [Min] | Operating Temperature [Max] | Current - Continuous Drain (Id) @ 25°C | Vgs(th) (Max) @ Id | Drain to Source Voltage (Vdss) | Mounting Type | FET Type | Drive Voltage (Max Rds On, Min Rds On) | Gate Charge (Qg) (Max) @ Vgs [Max] | Rds On (Max) @ Id, Vgs | Technology | Input Capacitance (Ciss) (Max) @ Vds | Supplier Device Package | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
IXYS | 30 V | 40 W | -55 °C | 150 °C | 750 mA | 4.5 V | 1000 V | Through Hole | N-Channel | 10 V | 7.8 nC | 17 Ohm | MOSFET (Metal Oxide) | 260 pF | TO-251AA | IPAK TO-251-3 Short Leads TO-251AA |