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BSC0911NDATMA1 - PG-TISON-8

BSC0911NDATMA1

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Infineon Technologies

OPTIMOS™ N-CHANNEL POWER MOSFET 25 V ; ASYMMETRICAL DUAL 5X6 PACKAGE; 1.2 MOHM;

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BSC0911NDATMA1 - PG-TISON-8

BSC0911NDATMA1

Active
Infineon Technologies

OPTIMOS™ N-CHANNEL POWER MOSFET 25 V ; ASYMMETRICAL DUAL 5X6 PACKAGE; 1.2 MOHM;

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationBSC0911NDATMA1
Configuration2 N-Channel (Dual) Asymmetrical
Current - Continuous Drain (Id) @ 25°C [Max]30 A
Current - Continuous Drain (Id) @ 25°C [Min]18 A
Drain to Source Voltage (Vdss)25 V
FET FeatureLogic Level Gate, 4.5V Drive
Gate Charge (Qg) (Max) @ Vgs12 nC
Input Capacitance (Ciss) (Max) @ Vds1600 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case8-PowerTDFN
Power - Max [Max]1 W
Rds On (Max) @ Id, Vgs3.2 mOhm
Supplier Device PackagePG-TISON-8
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id2 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 2.24
10$ 1.44
100$ 0.98
500$ 0.78
1000$ 0.72
2000$ 0.67
Digi-Reel® 1$ 2.24
10$ 1.44
100$ 0.98
500$ 0.78
1000$ 0.72
2000$ 0.67
Tape & Reel (TR) 5000$ 0.63
NewarkEach (Supplied on Cut Tape) 1$ 1.60
10$ 1.27
25$ 1.14
50$ 1.03
100$ 0.90
250$ 0.90
500$ 0.74
1000$ 0.66

Description

General part information

BSC0911 Series

With the OptiMOS™ 25V product family, Infineon sets new standards in power density and energy efficiency for discrete power MOSFETs and system in package. Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS™ 25V the best choice for the demanding requirements of voltage regulator solutions in servers, datacom and telecom applications. Available in halfbridge configuration (power stage 5x6).