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OPTIMOS™ N-CHANNEL POWER MOSFET 25 V ; ASYMMETRICAL DUAL 5X6 PACKAGE; 1.2 MOHM;
| Part | Power - Max [Max] | Operating Temperature [Min] | Operating Temperature [Max] | Current - Continuous Drain (Id) @ 25°C [Max] | Current - Continuous Drain (Id) @ 25°C [Min] | FET Feature | Mounting Type | Package / Case | Gate Charge (Qg) (Max) @ Vgs | Configuration | Rds On (Max) @ Id, Vgs | Technology | Input Capacitance (Ciss) (Max) @ Vds | Supplier Device Package | Vgs(th) (Max) @ Id | Drain to Source Voltage (Vdss) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | 1 W | -55 °C | 150 °C | 30 A | 18 A | 4.5V Drive Logic Level Gate | Surface Mount | 8-PowerTDFN | 12 nC | 2 N-Channel (Dual) Asymmetrical | 3.2 mOhm | MOSFET (Metal Oxide) | 1600 pF | PG-TISON-8 | 2 V | 25 V |