
DMN5L06DWK-7
ObsoleteDiodes Inc
NRND = NOT RECOMMENDED FOR NEW DESIGN
Deep-Dive with AI
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DMN5L06DWK-7
ObsoleteDiodes Inc
NRND = NOT RECOMMENDED FOR NEW DESIGN
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | DMN5L06DWK-7 |
|---|---|
| Configuration | 2 N-Channel (Dual) |
| Current - Continuous Drain (Id) @ 25°C | 305 mA |
| Drain to Source Voltage (Vdss) | 50 V |
| FET Feature | Logic Level Gate |
| Input Capacitance (Ciss) (Max) @ Vds | 50 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -65 °C |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Power - Max [Max] | 250 mW |
| Rds On (Max) @ Id, Vgs | 2 Ohm |
| Supplier Device Package | SOT-363 |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 1 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
Description
General part information
DMN5L06VAK Series
This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications.
Documents
Technical documentation and resources