DMN5L06VAK Series

NRND = Not Recommended for New Design

Catalog

NRND = Not Recommended for New Design

Part	Gate Charge (Qg) (Max) @ Vgs	Technology	Configuration	Drain to Source Voltage (Vdss)	Power - Max [Max]	Mounting Type	Supplier Device Package	Operating Temperature [Max]	Operating Temperature [Min]	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	Package / Case	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	FET Type	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max) [Max]	Qualification	Grade	FET Feature
Diodes Inc DMN5L06DWK-7-01	0.4 nC	MOSFET (Metal Oxide)	2 N-Channel (Dual)	50 V	250 mW	Surface Mount	SOT-363	150 °C	-65 °C	50 pF	1 V	6-TSSOP SC-88 SOT-363	305 mA	2 Ohm
Diodes Inc DMN5L06WK-7		MOSFET (Metal Oxide)		50 V		Surface Mount	SOT-323	150 °C	-65 °C	50 pF	1 V	SC-70 SOT-323	300 mA	2 Ohm	N-Channel	20 V	1.8 V 5 V	250 mW
Diodes Inc DMN5L06VK-7-79		MOSFET (Metal Oxide)	2 N-Channel (Dual)	50 V	250 mW	Surface Mount	SOT-563	150 °C	-55 °C	50 pF	1.2 V	SOT-563 SOT-666	280 mA	2 Ohm
Diodes Inc DMN5L06VKQ-13		MOSFET (Metal Oxide)	2 N-Channel (Dual)	50 V	250 mW	Surface Mount	SOT-563	150 °C	-55 °C	50 pF	1 V	SOT-563 SOT-666	280 mA	2 Ohm					AEC-Q101	Automotive
Diodes Inc DMN5L06VK-7-G		MOSFET (Metal Oxide)	2 N-Channel (Dual)	50 V	250 mW	Surface Mount	SOT-563	150 °C	-55 °C	50 pF	1.2 V	SOT-563 SOT-666	280 mA	2 Ohm					AEC-Q101	Automotive
Diodes Inc DMN5L06VK-13		MOSFET (Metal Oxide)	2 N-Channel (Dual)	50 V	250 mW	Surface Mount	SOT-563	150 °C	-55 °C	50 pF	1.2 V	SOT-563 SOT-666	280 mA	2 Ohm
Diodes Inc DMN5L06VK-13A		MOSFET (Metal Oxide)	2 N-Channel (Dual)	50 V	250 mW	Surface Mount	SOT-563	150 °C	-55 °C	50 pF	1.2 V	SOT-563 SOT-666	280 mA	2 Ohm
Diodes Inc DMN5L06VA-7		MOSFET (Metal Oxide)	2 N-Channel (Dual)	50 V		Surface Mount	SOT-563	150 °C	-55 °C	50 pF	1.2 V	SOT-563 SOT-666	280 mA	3 Ohm							Logic Level Gate
Diodes Inc DMN5L06DWK-7		MOSFET (Metal Oxide)	2 N-Channel (Dual)	50 V	250 mW	Surface Mount	SOT-363	150 °C	-65 °C	50 pF	1 V	6-TSSOP SC-88 SOT-363	305 mA	2 Ohm							Logic Level Gate
Diodes Inc DMN5L06VAK-7		MOSFET (Metal Oxide)	2 N-Channel (Dual)	50 V	250 mW	Surface Mount	SOT-563	150 °C	-55 °C	50 pF	1 V	SOT-563 SOT-666	280 mA	2 Ohm							Logic Level Gate

Catalog

NRND = Not Recommended for New Design

Key Features

• Low On-Resistance

• Very Low Gate Threshold Voltage, 1.0V Max

• Low Input Capacitance

• Fast Switching Speed

• Low Input/Output Leakage

• Ultra-Small Surface Mount Package

• ESD Protected up to 2kV

• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

• Halogen and Antimony Free. "Green" Device (Note 3)

• The DMN5L06VKQ is suitable for automotive applications requiring specific change control; this part is AEC-Q101qualified, PPAP capable, and manufactured in IATF 16949 certified facilities.https://www.diodes.com/quality/product-definitions/

Description

This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications.