
LM5109BQNGTTQ1
ActiveAUTOMOTIVE 1-A, 100-V HALF BRIDGE GATE DRIVER WITH 8-V UVLO AND HIGH NOISE IMMUNITY

LM5109BQNGTTQ1
ActiveAUTOMOTIVE 1-A, 100-V HALF BRIDGE GATE DRIVER WITH 8-V UVLO AND HIGH NOISE IMMUNITY
Description
General part information
LM5109 Series
The LM5109B device is a cost-effective, high-voltage gate driver designed to drive both the high-side and the low-side N-channel MOSFETs in a synchronous buck or a half-bridge configuration. The floating high-side driver is capable of working with rail voltages up to 90 V. The outputs are independently controlled with cost-effective TTL and CMOS-compatible input thresholds. The robust level shift technology operates at high speed while consuming low power and providing clean level transitions from the control input logic to the high-side gate driver. Undervoltage lockout is provided on both the low-side and the high-side power rails. The device is available in the 8-pin SOIC and thermally-enhanced 8-pin WSON packages.
The LM5109B device is a cost-effective, high-voltage gate driver designed to drive both the high-side and the low-side N-channel MOSFETs in a synchronous buck or a half-bridge configuration. The floating high-side driver is capable of working with rail voltages up to 90 V. The outputs are independently controlled with cost-effective TTL and CMOS-compatible input thresholds. The robust level shift technology operates at high speed while consuming low power and providing clean level transitions from the control input logic to the high-side gate driver. Undervoltage lockout is provided on both the low-side and the high-side power rails. The device is available in the 8-pin SOIC and thermally-enhanced 8-pin WSON packages.
Technical Specifications
Parameters and characteristics for this part
| Specification | LM5109BQNGTTQ1 |
|---|---|
| Channel Type | Independent |
| Current - Peak Output (Sink) | 1 A |
| Current - Peak Output (Source) | 1 A |
| Driven Configuration | Half-Bridge |
| Fall Time (Typ) | 15 ns |
| Gate Channel | N-Channel |
| Gate Type | MOSFET, N-Channel MOSFET |
| Grade | Automotive |
| High Side Voltage - Max (Bootstrap) | 108 V |
| Input Type | Non-Inverting |
| Logic Voltage - VIH | 2.2 V |
| Logic Voltage - VIL | 0.8 V |
| Mounting Type | Surface Mount |
| Number of Drivers | 2 |
| Operating Temperature (Max) | 125 °C |
| Operating Temperature (Min) | -40 °C |
| Package / Case | 8-WDFN Exposed Pad |
| Package Length | 4 mm |
| Package Name | 8-WSON |
| Package Width | 4 mm |
| Qualification | AEC-Q100 |
| Rise Time (Typ) | 15 ns |
| Voltage - Supply (Maximum) | 14 V |
| Voltage - Supply (Minimum) | 8 V |
Pricing
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