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WSON (NGT)

LM5109BQNGTTQ1

Active
Texas Instruments

AUTOMOTIVE 1-A, 100-V HALF BRIDGE GATE DRIVER WITH 8-V UVLO AND HIGH NOISE IMMUNITY

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WSON (NGT)

LM5109BQNGTTQ1

Active
Texas Instruments

AUTOMOTIVE 1-A, 100-V HALF BRIDGE GATE DRIVER WITH 8-V UVLO AND HIGH NOISE IMMUNITY

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Description

General part information

LM5109 Series

The LM5109B device is a cost-effective, high-voltage gate driver designed to drive both the high-side and the low-side N-channel MOSFETs in a synchronous buck or a half-bridge configuration. The floating high-side driver is capable of working with rail voltages up to 90 V. The outputs are independently controlled with cost-effective TTL and CMOS-compatible input thresholds. The robust level shift technology operates at high speed while consuming low power and providing clean level transitions from the control input logic to the high-side gate driver. Undervoltage lockout is provided on both the low-side and the high-side power rails. The device is available in the 8-pin SOIC and thermally-enhanced 8-pin WSON packages.

The LM5109B device is a cost-effective, high-voltage gate driver designed to drive both the high-side and the low-side N-channel MOSFETs in a synchronous buck or a half-bridge configuration. The floating high-side driver is capable of working with rail voltages up to 90 V. The outputs are independently controlled with cost-effective TTL and CMOS-compatible input thresholds. The robust level shift technology operates at high speed while consuming low power and providing clean level transitions from the control input logic to the high-side gate driver. Undervoltage lockout is provided on both the low-side and the high-side power rails. The device is available in the 8-pin SOIC and thermally-enhanced 8-pin WSON packages.

Technical Specifications

Parameters and characteristics for this part

SpecificationLM5109BQNGTTQ1
Channel TypeIndependent
Current - Peak Output (Sink)1 A
Current - Peak Output (Source)1 A
Driven ConfigurationHalf-Bridge
Fall Time (Typ)15 ns
Gate ChannelN-Channel
Gate TypeMOSFET, N-Channel MOSFET
GradeAutomotive
High Side Voltage - Max (Bootstrap)108 V
Input TypeNon-Inverting
Logic Voltage - VIH2.2 V
Logic Voltage - VIL0.8 V
Mounting TypeSurface Mount
Number of Drivers2
Operating Temperature (Max)125 °C
Operating Temperature (Min)-40 °C
Package / Case8-WDFN Exposed Pad
Package Length4 mm
Package Name8-WSON
Package Width4 mm
QualificationAEC-Q100
Rise Time (Typ)15 ns
Voltage - Supply (Maximum)14 V
Voltage - Supply (Minimum)8 V

Pricing

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CAD

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