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DMN3900UFA-7B - 3-XFDFN

DMN3900UFA-7B

Active
Diodes Inc

N-CHANNEL ENHANCEMENT MODE MOSFET

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DMN3900UFA-7B - 3-XFDFN

DMN3900UFA-7B

Active
Diodes Inc

N-CHANNEL ENHANCEMENT MODE MOSFET

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationDMN3900UFA-7B
Current - Continuous Drain (Id) @ 25°C550 mA
Drain to Source Voltage (Vdss)30 V
Drive Voltage (Max Rds On, Min Rds On)4.5 V, 1.8 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs0.7 nC
Input Capacitance (Ciss) (Max) @ Vds42.2 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case3-XFDFN
Power Dissipation (Max) [Max]390 mW
Rds On (Max) @ Id, Vgs760 mOhm
Supplier Device PackageX2-DFN0806-3
TechnologyMOSFET (Metal Oxide)
Vgs (Max)8 V
Vgs(th) (Max) @ Id950 mV

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.37
10$ 0.29
100$ 0.17
500$ 0.16
1000$ 0.11
2000$ 0.10
5000$ 0.10
Digi-Reel® 1$ 0.37
10$ 0.29
100$ 0.17
500$ 0.16
1000$ 0.11
2000$ 0.10
5000$ 0.10
Tape & Reel (TR) 10000$ 0.09
30000$ 0.09
50000$ 0.08

Description

General part information

DMN3900UFA Series

This MOSFET has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.