N-Channel Enhancement Mode MOSFET
N-Channel Enhancement Mode MOSFET
| Part | Technology | Package / Case | FET Type | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Mounting Type | Rds On (Max) @ Id, Vgs | Input Capacitance (Ciss) (Max) @ Vds | Operating Temperature [Min] | Operating Temperature [Max] | Power Dissipation (Max) [Max] | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Supplier Device Package | Vgs(th) (Max) @ Id | Drain to Source Voltage (Vdss) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Diodes Inc | MOSFET (Metal Oxide) | 3-XFDFN | N-Channel | 0.7 nC | 8 V | Surface Mount | 760 mOhm | 42.2 pF | -55 °C | 150 °C | 390 mW | 550 mA | 1.8 V 4.5 V | X2-DFN0806-3 | 950 mV | 30 V |