SSM3J307T(TE85L,F)

Obsolete

Toshiba Semiconductor and Storage

MOSFET P-CH 20V 5A TSM

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Obsolete

Toshiba Semiconductor and Storage

MOSFET P-CH 20V 5A TSM

Technical Specifications

Parameters and characteristics for this part

Specification	SSM3J307T(TE85L,F)

Current - Continuous Drain (Id) @ 25°C	5 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 1.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	19 nC
Input Capacitance (Ciss) (Max) @ Vds	1170 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SOT-23-3, TO-236-3, SC-59
Power Dissipation (Max)	700 mW
Rds On (Max) @ Id, Vgs	31 mOhm
Supplier Device Package	TSM
Technology	MOSFET (Metal Oxide)
Vgs (Max)	8 V
Vgs(th) (Max) @ Id	1 V

Part	Power Dissipation (Max)	FET Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Supplier Device Package	Drain to Source Voltage (Vdss)	Operating Temperature	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Technology
Toshiba Semiconductor and Storage SSM3J307T(TE85L,F)	700 mW	P-Channel	19 nC	SC-59 SOT-23-3 TO-236-3	1170 pF	31 mOhm	1 V	TSM	20 V	150 °C	8 V	1.5 V 4.5 V	5 A	Surface Mount	MOSFET (Metal Oxide)

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

P-Channel 20 V 5A (Ta) 700mW (Ta) Surface Mount TSM

Technical documentation and resources