MOSFET P-CH 20V 5A TSM
| Part | Power Dissipation (Max) | FET Type | Gate Charge (Qg) (Max) @ Vgs [Max] | Package / Case | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Supplier Device Package | Drain to Source Voltage (Vdss) | Operating Temperature | Vgs (Max) | Drive Voltage (Max Rds On, Min Rds On) | Current - Continuous Drain (Id) @ 25°C | Mounting Type | Technology |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba Semiconductor and Storage | 700 mW | P-Channel | 19 nC | SC-59 SOT-23-3 TO-236-3 | 1170 pF | 31 mOhm | 1 V | TSM | 20 V | 150 °C | 8 V | 1.5 V 4.5 V | 5 A | Surface Mount | MOSFET (Metal Oxide) |