
DMTH10H015SPSWQ-13
ActiveDiodes Inc
100V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET
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DMTH10H015SPSWQ-13
ActiveDiodes Inc
100V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | DMTH10H015SPSWQ-13 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 56 A |
| Drain to Source Voltage (Vdss) | 100 V |
| Drive Voltage (Max Rds On, Min Rds On) | 6 V, 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 30.1 nC |
| Grade | Automotive |
| Input Capacitance (Ciss) (Max) @ Vds | 2343 pF |
| Mounting Type | Wettable Flank, Surface Mount |
| Operating Temperature [Max] | 175 ░C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | 8-PowerTDFN |
| Power Dissipation (Max) | 94 W, 2.7 W |
| Qualification | AEC-Q101 |
| Rds On (Max) @ Id, Vgs [Max] | 14.5 mOhm |
| Supplier Device Package | PowerDI5060-8 (Type UX) |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 4 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tape & Reel (TR) | 2500 | $ 0.46 | |
| 5000 | $ 0.43 | |||
| 7500 | $ 0.43 | |||
Description
General part information
DMTH10H015SPSWQ Series
This new generation N-Channel Enhancement Mode MOSFET is designed to minimize RDS(ON) yet maintain superior switching performance. This device is ideal for use in: motor controls, DC-DC converters, and power management.
Documents
Technical documentation and resources