Zenode.ai Logo
Beta
K
DMTH10H015SPSWQ-13 - PowerDI5060 UX

DMTH10H015SPSWQ-13

Active
Diodes Inc

100V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET

Deep-Dive with AI

Search across all available documentation for this part.

DMTH10H015SPSWQ-13 - PowerDI5060 UX

DMTH10H015SPSWQ-13

Active
Diodes Inc

100V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationDMTH10H015SPSWQ-13
Current - Continuous Drain (Id) @ 25°C56 A
Drain to Source Voltage (Vdss)100 V
Drive Voltage (Max Rds On, Min Rds On)6 V, 10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs30.1 nC
GradeAutomotive
Input Capacitance (Ciss) (Max) @ Vds2343 pF
Mounting TypeWettable Flank, Surface Mount
Operating Temperature [Max]175 ░C
Operating Temperature [Min]-55 °C
Package / Case8-PowerTDFN
Power Dissipation (Max)94 W, 2.7 W
QualificationAEC-Q101
Rds On (Max) @ Id, Vgs [Max]14.5 mOhm
Supplier Device PackagePowerDI5060-8 (Type UX)
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTape & Reel (TR) 2500$ 0.46
5000$ 0.43
7500$ 0.43

Description

General part information

DMTH10H015SPSWQ Series

This new generation N-Channel Enhancement Mode MOSFET is designed to minimize RDS(ON) yet maintain superior switching performance. This device is ideal for use in: motor controls, DC-DC converters, and power management.

Documents

Technical documentation and resources