DMTH10H015SPSWQ Series

100V 175°C N-Channel Enhancement Mode MOSFET

Catalog

100V 175°C N-Channel Enhancement Mode MOSFET

Part	Current - Continuous Drain (Id) @ 25°C	Package / Case	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Mounting Type	Supplier Device Package	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]	FET Type	Qualification	Input Capacitance (Ciss) (Max) @ Vds	Grade	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Rds On (Max) @ Id, Vgs [Max]	Technology	Drive Voltage (Max Rds On, Min Rds On)
Diodes Inc DMTH10H015SPSWQ-13	56 A	8-PowerTDFN	100 V	2.7 W 94 W	Surface Mount Wettable Flank	PowerDI5060-8 (Type UX)	4 V	-55 °C	175 ░C	N-Channel	AEC-Q101	2343 pF	Automotive	30.1 nC	20 V	14.5 mOhm	MOSFET (Metal Oxide)	6 V 10 V

Catalog

100V 175°C N-Channel Enhancement Mode MOSFET

Key Features

• Rated to +175C—Ideal for High Ambient Temperature Environments

• 100% Unclamped Inductive Switching (UIS) Test in Production—

• Ensures More Reliable and Robust End Application

• Thermally Efficient Package—Cooler Running Applications

• Low RDS(ON)—Minimizes On-State Losses

• Low Input Capacitance

• Fast Switching Speed

• Lead-Free Finish; RoHS Compliant (Notes 1 & 2)

• Halogen and Antimony Free. "Green" Device (Note 3)

• The DMTH10H015SPSWQ is suitable for automotive applications requiring specific change control; this part is AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities.https://www.diodes.com/quality/product-definitions/

Description

This new generation N-Channel Enhancement Mode MOSFET is designed to minimize RDS(ON) yet maintain superior switching performance. This device is ideal for use in: motor controls, DC-DC converters, and power management.