IMZA65R015M2HXKSA1

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Infineon Technologies

SILICON CARBIDE MOSFET, SINGLE, N CHANNEL, 103 A, 650 V, 0.0132 OHM, TO-247

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IMZA65R015M2HXKSA1

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Infineon Technologies

SILICON CARBIDE MOSFET, SINGLE, N CHANNEL, 103 A, 650 V, 0.0132 OHM, TO-247

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Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IMZA65R015M2HXKSA1

Current - Continuous Drain (Id) @ 25°C	103 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	15 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	20 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	79 nC
Input Capacitance (Ciss) (Max) @ Vds	2792 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-4
Power Dissipation (Max)	341 W
Rds On (Max) @ Id, Vgs	13.2 mOhm
Supplier Device Package	PG-TO247-4-8
Technology	SiC (Silicon Carbide Junction Transistor)
Vgs (Max)	-7 V, 23 V
Vgs(th) (Max) @ Id	5.6 V

IMZA65R015 Series

Part	Package / Case	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	FET Type	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Technology	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs (Max)	Drain to Source Voltage (Vdss)	Mounting Type	Power Dissipation (Max)	Supplier Device Package
Infineon Technologies IMZA65R015M2HXKSA1	TO-247-4	103 A	-55 °C	175 ░C	N-Channel	15 V	20 V	13.2 mOhm	5.6 V	SiC (Silicon Carbide Junction Transistor)	2792 pF	79 nC	-7 V 23 V	650 V	Through Hole	341 W	PG-TO247-4-8

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1	$ 23.26
		10	$ 17.07
		25	$ 15.49
		100	$ 13.72
		250	$ 12.86
		500	$ 12.66
Newark	Each	1	$ 18.24
		10	$ 14.50
		25	$ 13.41
		50	$ 12.92
		100	$ 12.43
		480	$ 12.00
		720	$ 11.73

Description

General part information

IMZA65R015 Series

The CoolSiC™ MOSFET 650 V, 15 mΩ G2 in a TO-247-4 package builds on the strengths of Generation 1 technology and enables the accelerated system design of more cost optimized, efficient, compact, and reliable solutions. Generation 2 comes with significant improvements in key figures-of-merit for both, hard-switching operation and soft-switching topologies, suitable for all common combinations of AC-DC, DC-DC, and DC-AC stages.

Documents

Technical documentation and resources