Beta
⌘K
SILICON CARBIDE MOSFET, SINGLE, N CHANNEL, 103 A, 650 V, 0.0132 OHM, TO-247
| Part | Package / Case | Current - Continuous Drain (Id) @ 25°C | Operating Temperature [Min] | Operating Temperature [Max] | FET Type | Drive Voltage (Max Rds On, Min Rds On) [Max] | Drive Voltage (Max Rds On, Min Rds On) [Min] | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Technology | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs [Max] | Vgs (Max) | Drain to Source Voltage (Vdss) | Mounting Type | Power Dissipation (Max) | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | TO-247-4 | 103 A | -55 °C | 175 ░C | N-Channel | 15 V | 20 V | 13.2 mOhm | 5.6 V | SiC (Silicon Carbide Junction Transistor) | 2792 pF | 79 nC | -7 V 23 V | 650 V | Through Hole | 341 W | PG-TO247-4-8 |