IDH10S60CAKSA1

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Infineon Technologies

DIODE SIL CARB 600V 10A TO220-2

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Unknown

Infineon Technologies

DIODE SIL CARB 600V 10A TO220-2

Technical Specifications

Parameters and characteristics for this part

Specification	IDH10S60CAKSA1

Capacitance @ Vr, F	480 pF
Current - Average Rectified (Io)	10 A
Current - Reverse Leakage @ Vr	140 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 C
Package / Case	TO-220-2
Reverse Recovery Time (trr)	0 ns
Speed	No Recovery Time
Supplier Device Package	PG-TO220-2-2
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	600 V
Voltage - Forward (Vf) (Max) @ If	1.7 V

Part	Reverse Recovery Time (trr)	Technology	Package / Case	Mounting Type	Voltage - DC Reverse (Vr) (Max) [Max]	Capacitance @ Vr, F	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Current - Average Rectified (Io)	Supplier Device Package	Current - Reverse Leakage @ Vr	Voltage - Forward (Vf) (Max) @ If	Speed
Infineon Technologies IDH10S60CAKSA1	0 ns	SiC (Silicon Carbide) Schottky	TO-220-2	Through Hole	600 V	480 pF	175 ░C	-55 C	10 A	PG-TO220-2-2	140 µA	1.7 V	No Recovery Time

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Diode 600 V 10A Through Hole PG-TO220-2-2

Technical documentation and resources