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DIODE SIL CARB 600V 10A TO220-2
| Part | Reverse Recovery Time (trr) | Technology | Package / Case | Mounting Type | Voltage - DC Reverse (Vr) (Max) [Max] | Capacitance @ Vr, F | Operating Temperature - Junction [Max] | Operating Temperature - Junction [Min] | Current - Average Rectified (Io) | Supplier Device Package | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Speed |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | 0 ns | SiC (Silicon Carbide) Schottky | TO-220-2 | Through Hole | 600 V | 480 pF | 175 ░C | -55 C | 10 A | PG-TO220-2-2 | 140 µA | 1.7 V | No Recovery Time |