DCK10I1200HA
ActiveLITTELFUSE
SIC SCHOTTKY DIODE 1200V 10A TO-
DCK10I1200HA
ActiveLITTELFUSE
SIC SCHOTTKY DIODE 1200V 10A TO-
Description
General part information
DCK10I1200HA Series
This series of silicon carbide (SiC) Schottky diodes has negligible reverse recovery current, high surge capability, and a maximum operating junction temperature of 175 °C. These diodes series are ideal for applications where improvements in efficiency, reliability, and thermal management are desired.
Technical Specifications
Parameters and characteristics for this part
| Specification | DCK10I1200HA |
|---|---|
| Capacitance | 575 pF |
| Current - Average Rectified (Io) | 30 A |
| Current - Reverse Leakage | 100 µA |
| Mounting Type | Through Hole |
| Operating Temperature - Junction (Max) | 175 °C |
| Operating Temperature - Junction (Min) | -55 °C |
| Package / Case | TO-247-2 |
| Package Name | TO-247 |
| Reverse Recovery Time (trr) | 0 ns |
| Speed | No Recovery Time |
| Speed - Fast Recovery (Minimum) | 500 mA |
| Speed - Recovery Current | 500 mA, 500 mA |
| Technology | SiC (Silicon Carbide) Schottky |
| Voltage - DC Reverse (Vr) (Max) | 1200 V |
| Voltage - Forward (Vf) (Max) | 1.7 V |
Pricing
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