DCK10I1200HA Series

SiC Diode in TO247-2L

Catalog

SiC Diode in TO247-2L

Part	Current - Reverse Leakage	Capacitance	Technology	Current - Average Rectified (Io)	Operating Temperature - Junction (Max)	Operating Temperature - Junction (Min)	Package / Case	Package Name	Speed - Fast Recovery (Minimum)	Speed	Speed - Recovery Current	Voltage - Forward (Vf) (Max)	Mounting Type	Reverse Recovery Time (trr)	Voltage - DC Reverse (Vr) (Max)
LITTELFUSE DCK10I1200HA	100 µA	575 pF	SiC (Silicon Carbide) Schottky	30 A	175 °C	-55 °C	TO-247-2	TO-247	500 mA	No Recovery Time	500 mA 500 mA	1.7 V	Through Hole	0 ns	1200 V

Catalog

SiC Diode in TO247-2L

Description

This series of silicon carbide (SiC) Schottky diodes has negligible reverse recovery current, high surge capability, and a maximum operating junction temperature of 175 °C. These diodes series are ideal for applications where improvements in efficiency, reliability, and thermal management are desired.