IRF7324TRPBF
ActiveIR MOSFET™ P+P DUAL MOSFET ; SO-8 PACKAGE; 18 MOHM;
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IRF7324TRPBF
ActiveIR MOSFET™ P+P DUAL MOSFET ; SO-8 PACKAGE; 18 MOHM;
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | IRF7324TRPBF |
|---|---|
| Configuration | 2 P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 9 A |
| Drain to Source Voltage (Vdss) | 20 V |
| FET Feature | Logic Level Gate |
| Gate Charge (Qg) (Max) @ Vgs | 63 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 2940 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | 8-SOIC |
| Package / Case [x] | 0.154 in |
| Package / Case [y] | 3.9 mm |
| Power - Max [Max] | 2 W |
| Rds On (Max) @ Id, Vgs | 18 mOhm |
| Supplier Device Package | 8-SO |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 1 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Cut Tape (CT) | 1 | $ 1.47 | |
| 10 | $ 1.20 | |||
| 100 | $ 0.94 | |||
| 500 | $ 0.79 | |||
| 1000 | $ 0.65 | |||
| 2000 | $ 0.61 | |||
| Digi-Reel® | 1 | $ 1.47 | ||
| 10 | $ 1.20 | |||
| 100 | $ 0.94 | |||
| 500 | $ 0.79 | |||
| 1000 | $ 0.65 | |||
| 2000 | $ 0.61 | |||
| Tape & Reel (TR) | 4000 | $ 0.61 | ||
| 8000 | $ 0.58 | |||
| 12000 | $ 0.55 | |||
Description
General part information
IRF732 Series
IRF7324TRPBF is a HEXFET® power MOSFET. This from international rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in battery and load management applications.
Documents
Technical documentation and resources