MOSFET 2P-CH 12V 7.8A 8SO
| Part | Configuration | Drain to Source Voltage (Vdss) | Supplier Device Package | Package / Case | Package / Case [y] | Package / Case [x] | Operating Temperature [Min] | Operating Temperature [Max] | Gate Charge (Qg) (Max) @ Vgs [Max] | Current - Continuous Drain (Id) @ 25°C | Vgs(th) (Max) @ Id | Mounting Type | FET Feature | Rds On (Max) @ Id, Vgs | Power - Max [Max] | Technology | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | 2 P-Channel | 12 V | 8-SO | 8-SOIC | 3.9 mm | 0.154 in | -55 °C | 150 °C | 33 nC | 7.8 A | 900 mV | Surface Mount | Logic Level Gate | 24 mOhm | 2 W | MOSFET (Metal Oxide) | ||
Infineon Technologies | 2 P-Channel | 20 V | 8-SO | 8-SOIC | 3.9 mm | 0.154 in | -55 °C | 150 °C | 9 A | 1 V | Surface Mount | Logic Level Gate | 18 mOhm | 2 W | MOSFET (Metal Oxide) | 63 nC | 2940 pF | |
Infineon Technologies | 2 P-Channel | 30 V | 8-SO | 8-SOIC | 3.9 mm | 0.154 in | -55 °C | 150 °C | 8 A | 2.5 V | Surface Mount | Logic Level Gate | 21 mOhm | 2 W | MOSFET (Metal Oxide) | 78 nC | 2675 pF | |
Infineon Technologies | 2 P-Channel | 12 V | 8-SO | 8-SOIC | 3.9 mm | 0.154 in | -55 °C | 150 °C | 33 nC | 7.8 A | 900 mV | Surface Mount | Logic Level Gate | 24 mOhm | 2 W | MOSFET (Metal Oxide) | ||
Infineon Technologies | 2 P-Channel | 12 V | 8-SO | 8-SOIC | 3.9 mm | 0.154 in | -55 °C | 150 °C | 57 nC | 9.2 A | 900 mV | Surface Mount | Logic Level Gate | 17 mOhm | 2 W | MOSFET (Metal Oxide) | 3450 pF | |
Infineon Technologies | 2 P-Channel | 30 V | 8-SO | 8-SOIC | 3.9 mm | 0.154 in | -55 °C | 150 °C | 8 A | 2.5 V | Surface Mount | Logic Level Gate | 21 mOhm | 2 W | MOSFET (Metal Oxide) | 78 nC | 2675 pF | |
Infineon Technologies | 2 P-Channel | 30 V | 8-SO | 8-SOIC | 3.9 mm | 0.154 in | -55 °C | 150 °C | 8 A | 2.5 V | Surface Mount | Logic Level Gate | 21 mOhm | 2 W | MOSFET (Metal Oxide) | 78 nC | 2675 pF | |
Infineon Technologies | 2 P-Channel | 20 V | 8-SO | 8-SOIC | 3.9 mm | 0.154 in | -55 °C | 150 °C | 9 A | 1 V | Surface Mount | Logic Level Gate | 18 mOhm | 2 W | MOSFET (Metal Oxide) | 63 nC | 2940 pF | |
Infineon Technologies | 2 P-Channel | 12 V | 8-SO | 8-SOIC | 3.9 mm | 0.154 in | -55 °C | 150 °C | 57 nC | 9.2 A | 900 mV | Surface Mount | Logic Level Gate | 17 mOhm | 2 W | MOSFET (Metal Oxide) | 3450 pF | |
Infineon Technologies | 2 P-Channel | 12 V | 8-SO | 8-SOIC | 3.9 mm | 0.154 in | -55 °C | 150 °C | 33 nC | 7.8 A | 900 mV | Surface Mount | Logic Level Gate | 24 mOhm | 2 W | MOSFET (Metal Oxide) |