SPB08P06P

Obsolete

Infineon Technologies

MOSFET P-CH 60V 8.8A TO263-3

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Obsolete

Infineon Technologies

MOSFET P-CH 60V 8.8A TO263-3

Technical Specifications

Parameters and characteristics for this part

Specification	SPB08P06P

Current - Continuous Drain (Id) @ 25°C	8.8 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	13 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	420 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max)	42 W
Rds On (Max) @ Id, Vgs	300 mOhm
Supplier Device Package	PG-TO263-3-2
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs [Max]	Technology	Vgs (Max)	Package / Case	Drain to Source Voltage (Vdss)	Mounting Type	Supplier Device Package	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds [Max]	Rds On (Max) @ Id, Vgs	FET Type	Power Dissipation (Max)
Infineon Technologies SPB08P06P	10 V	13 nC	MOSFET (Metal Oxide)	20 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	60 V	Surface Mount	PG-TO263-3-2	4 V	-55 °C	175 ░C	8.8 A	420 pF	300 mOhm	P-Channel	42 W

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

P-Channel 60 V 8.8A (Ta) 42W (Tc) Surface Mount PG-TO263-3-2

Technical documentation and resources