MOSFET P-CH 60V 8.8A TO263-3
| Part | Drive Voltage (Max Rds On, Min Rds On) | Gate Charge (Qg) (Max) @ Vgs [Max] | Technology | Vgs (Max) | Package / Case | Drain to Source Voltage (Vdss) | Mounting Type | Supplier Device Package | Vgs(th) (Max) @ Id | Operating Temperature [Min] | Operating Temperature [Max] | Current - Continuous Drain (Id) @ 25°C | Input Capacitance (Ciss) (Max) @ Vds [Max] | Rds On (Max) @ Id, Vgs | FET Type | Power Dissipation (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | 10 V | 13 nC | MOSFET (Metal Oxide) | 20 V | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | 60 V | Surface Mount | PG-TO263-3-2 | 4 V | -55 °C | 175 ░C | 8.8 A | 420 pF | 300 mOhm | P-Channel | 42 W |