GT10J312(Q)

Obsolete

Toshiba Semiconductor and Storage

IGBT 600V 10A 60W TO220SM

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Obsolete

Toshiba Semiconductor and Storage

IGBT 600V 10A 60W TO220SM

Technical Specifications

Parameters and characteristics for this part

Specification	GT10J312(Q)

Current - Collector Pulsed (Icm)	20 A
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-262AA, TO-262-3 Long Leads, I2PAK
Power - Max [Max]	60 W
Reverse Recovery Time (trr)	200 ns
Td (on/off) @ 25°C	400 ns
Test Condition	100 Ohm, 300 V, 15 V, 10 A
Vce(on) (Max) @ Vge, Ic	2.7 V
Voltage - Collector Emitter Breakdown (Max) [Max]	600 V

Part	Current - Collector Pulsed (Icm)	Td (on/off) @ 25°C	Vce(on) (Max) @ Vge, Ic	Voltage - Collector Emitter Breakdown (Max) [Max]	Operating Temperature	Package / Case	Reverse Recovery Time (trr)	Test Condition	Mounting Type	Power - Max [Max]
Toshiba Semiconductor and Storage GT10J312(Q)	20 A	400 ns	2.7 V	600 V	150 °C	I2PAK TO-262-3 Long Leads TO-262AA	200 ns	10 A 15 V 100 Ohm 300 V	Through Hole	60 W

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

IGBT 600 V 10 A 60 W Through Hole

Technical documentation and resources