GT10J312 Series
Manufacturer: Toshiba Semiconductor and Storage
Beta
⌘K
IGBT 600V 10A 60W TO220SM
| Part | Vce(on) (Max) | Voltage - Collector Emitter Breakdown (Max) | Power - Max | Current - Collector (Ic) (Max) | Mounting Type | Reverse Recovery Time (trr) | Operating Temperature | Package / Case | Test Condition Current | Test Condition Voltage | Test Condition Voltage (Secondary) | Test Condition Resistance | Td (off) @ 25°C | Td (on) @ 25°C | Input Type | Current - Collector Pulsed (Icm) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Toshiba Semiconductor and Storage | 2.7 V | 600 V | 60 W | 10 A | Through Hole | 200 ns | 150 °C | I2PAK TO-262-3 Long Leads TO-262AA | 10 A | 300 V | 15 V | 100 Ohm | 400 ns | 400 ns | Standard | 20 A |