TK12A53D(STA4,Q,M)

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Toshiba Semiconductor and Storage

MOSFET N-CH 525V 12A TO220SIS

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Toshiba Semiconductor and Storage

MOSFET N-CH 525V 12A TO220SIS

Technical Specifications

Parameters and characteristics for this part

Specification	TK12A53D(STA4,Q,M)

Current - Continuous Drain (Id) @ 25°C	12 A
Drain to Source Voltage (Vdss)	525 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	25 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	1350 pF
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-220-3 Full Pack
Power Dissipation (Max)	45 W
Rds On (Max) @ Id, Vgs	580 mOhm
Supplier Device Package	TO-220SIS
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V

Part	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Package / Case	Operating Temperature	Current - Continuous Drain (Id) @ 25°C	FET Type	Technology	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	Mounting Type	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs [Max]	Power Dissipation (Max)
Toshiba Semiconductor and Storage TK12A53D(STA4,Q,M)	30 V	1350 pF	TO-220-3 Full Pack	150 °C	12 A	N-Channel	MOSFET (Metal Oxide)	10 V	TO-220SIS	Through Hole	580 mOhm	525 V	25 nC	45 W

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General part information

N-Channel 525 V 12A (Ta) 45W (Tc) Through Hole TO-220SIS

Technical documentation and resources